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#include "sram.h"
#include "usart.h"
//使用NOR/SRAM的 Bank1.sector3,地址位HADDR[27,26]=10
//對IS61LV25616/IS62WV25616,地址線范圍為A0~A17
//對IS61LV51216/IS62WV51216,地址線范圍為A0~A18
#define Bank1_SRAM3_ADDR ((u32)(0x68000000))
#define Bank1_SRAM4_ADDR ((u32)(0x6C000000))
//初始化外部SRAM
void FSMC_SRAM_Init(void)
{
FSMC_NORSRAMInitTypeDef FSMC_NORSRAMInitStructure;
FSMC_NORSRAMTimingInitTypeDef readWriteTiming;
GPIO_InitTypeDef GPIO_InitStructure;
RCC_APB2PeriphClockCmd(RCC_APB2Periph_GPIOD|RCC_APB2Periph_GPIOE|RCC_APB2Periph_GPIOF|RCC_APB2Periph_GPIOG,ENABLE);
RCC_AHBPeriphClockCmd(RCC_AHBPeriph_FSMC,ENABLE);
GPIO_InitStructure.GPIO_Pin = 0xFF33; //PORTD復用推挽輸出
GPIO_InitStructure.GPIO_Mode = GPIO_Mode_AF_PP; //復用推挽輸出
GPIO_InitStructure.GPIO_Speed = GPIO_Speed_50MHz;
GPIO_Init(GPIOD, &GPIO_InitStructure);
GPIO_InitStructure.GPIO_Pin = 0xFF83; //PORTE復用推挽輸出
GPIO_Init(GPIOE, &GPIO_InitStructure);
GPIO_InitStructure.GPIO_Pin = 0xF03F; //PORTD復用推挽輸出
GPIO_Init(GPIOF, &GPIO_InitStructure);
GPIO_InitStructure.GPIO_Pin = 0x043F; //PORTD復用推挽輸出
GPIO_Init(GPIOG, &GPIO_InitStructure);
readWriteTiming.FSMC_AddressSetupTime = 0x00; //地址建立時間（ADDSET）為1個HCLK 1/36M=27ns
readWriteTiming.FSMC_AddressHoldTime = 0x00; //地址保持時間（ADDHLD）模式A未用到
readWriteTiming.FSMC_DataSetupTime = 0x03; //數據保持時間（DATAST）為3個HCLK 4/72M=55ns(對EM的SRAM芯片)
readWriteTiming.FSMC_BusTurnAroundDuration = 0x00;
readWriteTiming.FSMC_CLKDivision = 0x00;
readWriteTiming.FSMC_DataLatency = 0x00;
readWriteTiming.FSMC_AccessMode = FSMC_AccessMode_A; //模式A
FSMC_NORSRAMInitStructure.FSMC_Bank = FSMC_Bank1_NORSRAM3;// 這里我們使用NE3 ，也就對應BTCR[4],[5]。
FSMC_NORSRAMInitStructure.FSMC_DataAddressMux = FSMC_DataAddressMux_Disable;
FSMC_NORSRAMInitStructure.FSMC_MemoryType =FSMC_MemoryType_SRAM;// FSMC_MemoryType_SRAM; //SRAM
FSMC_NORSRAMInitStructure.FSMC_MemoryDataWidth = FSMC_MemoryDataWidth_16b;//存儲器數據寬度為16bit
FSMC_NORSRAMInitStructure.FSMC_BurstAccessMode =FSMC_BurstAccessMode_Disable;// FSMC_BurstAccessMode_Disable;
FSMC_NORSRAMInitStructure.FSMC_WaitSignalPolarity = FSMC_WaitSignalPolarity_Low;
FSMC_NORSRAMInitStructure.FSMC_AsynchronousWait=FSMC_AsynchronousWait_Disable;
FSMC_NORSRAMInitStructure.FSMC_WrapMode = FSMC_WrapMode_Disable;
FSMC_NORSRAMInitStructure.FSMC_WaitSignalActive = FSMC_WaitSignalActive_BeforeWaitState;
FSMC_NORSRAMInitStructure.FSMC_WriteOperation = FSMC_WriteOperation_Enable; //存儲器寫使能
FSMC_NORSRAMInitStructure.FSMC_WaitSignal = FSMC_WaitSignal_Disable;
FSMC_NORSRAMInitStructure.FSMC_ExtendedMode = FSMC_ExtendedMode_Disable; // 讀寫使用相同的時序
FSMC_NORSRAMInitStructure.FSMC_WriteBurst = FSMC_WriteBurst_Disable;
FSMC_NORSRAMInitStructure.FSMC_ReadWriteTimingStruct = &readWriteTiming;
FSMC_NORSRAMInitStructure.FSMC_WriteTimingStruct = &readWriteTiming; //讀寫同樣時序
FSMC_NORSRAMInit(&FSMC_NORSRAMInitStructure); //初始化FSMC配置
FSMC_NORSRAMCmd(FSMC_Bank1_NORSRAM3, ENABLE); // 使能BANK3
}
//在指定地址開始,連續寫入n個字節.
//pBuffer:字節指針
//WriteAddr:要寫入的地址
//n:要寫入的字節數
void FSMC_SRAM_WriteBuffer(u8* pBuffer,u32 WriteAddr,u32 n) ///void FSMC_SRAM_WriteBuffer(u16* pBuffer,u32 WriteAddr,u32 n)
{
for(;n!=0;n--)
{
*(vu8*)(Bank1_SRAM3_ADDR+WriteAddr)=*pBuffer; // *(vu16*)(Bank1_SRAM3_ADDR+WriteAddr)=*pBuffer;
WriteAddr+=1;//這里需要加2，是因為STM32的FSMC地址右移一位對其.加2相當于加1.
pBuffer++;
}
}
//在指定地址開始,連續讀出n個字節.
//pBuffer:字節指針
//ReadAddr:要讀出的起始地址
//n:要寫入的字節數
void FSMC_SRAM_ReadBuffer(u8* pBuffer,u32 ReadAddr,u32 n) ///void FSMC_SRAM_ReadBuffer(u16* pBuffer,u32 ReadAddr,u32 n)
{
for(;n!=0;n--)
{
*pBuffer++=*(vu8*)(Bank1_SRAM3_ADDR+ReadAddr); // *pBuffer++=*(vu16*)(Bank1_SRAM3_ADDR+ReadAddr);
ReadAddr+=1;//這里需要加2，是因為STM32的FSMC地址右移一位對其.加2相當于加1.
}
}
////////////////////////////////////////////////////////////////////////////////////////
//測試函數
//在指定地址寫入1個字節
//addr:地址
//data:要寫入的數據
void fsmc_sram_test_write(u8 *data,u32 addr)//void fsmc_sram_test_write(u16 data,u32 addr)
{
FSMC_SRAM_WriteBuffer(data,addr,250);//寫入1個字節
}
//讀取1個字節
//addr:要讀取的地址
//返回值:讀取到的數據
u8 fsmc_sram_test_read(u32 addr) //u16 fsmc_sram_test_read(u32 addr)
{
u8 data; //u16 data;
FSMC_SRAM_ReadBuffer(&data,addr,1);
return data;
}
void FSMC_FPGA_Init(void)
{
FSMC_NORSRAMInitTypeDef FSMC_NORSRAMInitStructure;
FSMC_NORSRAMTimingInitTypeDef readWriteTiming;
GPIO_InitTypeDef GPIO_InitStructure;
RCC_APB2PeriphClockCmd(RCC_APB2Periph_GPIOD|RCC_APB2Periph_GPIOE|RCC_APB2Periph_GPIOF|RCC_APB2Periph_GPIOG,ENABLE);
RCC_AHBPeriphClockCmd(RCC_AHBPeriph_FSMC,ENABLE);
GPIO_InitStructure.GPIO_Pin = 0xFF33; //PORTD復用推挽輸出
GPIO_InitStructure.GPIO_Mode = GPIO_Mode_AF_PP; //復用推挽輸出
GPIO_InitStructure.GPIO_Speed = GPIO_Speed_50MHz;
GPIO_Init(GPIOD, &GPIO_InitStructure);
GPIO_InitStructure.GPIO_Pin = 0xFF83; //PORTE復用推挽輸出
GPIO_Init(GPIOE, &GPIO_InitStructure);
GPIO_InitStructure.GPIO_Pin = 0xF03F; //PORTD復用推挽輸出
GPIO_Init(GPIOF, &GPIO_InitStructure);
GPIO_InitStructure.GPIO_Pin = 0x143F; //PORTD復用推挽輸出
GPIO_Init(GPIOG, &GPIO_InitStructure);
readWriteTiming.FSMC_AddressSetupTime = 0x0f; //地址建立時間（ADDSET）為1個HCLK 1/36M=27ns
readWriteTiming.FSMC_AddressHoldTime = 0x0f; //地址保持時間（ADDHLD）模式A未用到
readWriteTiming.FSMC_DataSetupTime = 0xff; //數據保持時間（DATAST）為3個HCLK 4/72M=55ns(對EM的SRAM芯片) //0x03;
readWriteTiming.FSMC_BusTurnAroundDuration = 0x00;
readWriteTiming.FSMC_CLKDivision = 0x00;
readWriteTiming.FSMC_DataLatency = 0x00;
readWriteTiming.FSMC_AccessMode = FSMC_AccessMode_A; //模式A
FSMC_NORSRAMInitStructure.FSMC_Bank = FSMC_Bank1_NORSRAM4;// 這里我們使用NE3 ，也就對應BTCR[4],[5]。
FSMC_NORSRAMInitStructure.FSMC_DataAddressMux = FSMC_DataAddressMux_Disable;
FSMC_NORSRAMInitStructure.FSMC_MemoryType =FSMC_MemoryType_SRAM;// FSMC_MemoryType_SRAM; //SRAM
FSMC_NORSRAMInitStructure.FSMC_MemoryDataWidth = FSMC_MemoryDataWidth_8b;//存儲器數據寬度為16bit
FSMC_NORSRAMInitStructure.FSMC_BurstAccessMode =FSMC_BurstAccessMode_Disable;// FSMC_BurstAccessMode_Disable;
FSMC_NORSRAMInitStructure.FSMC_WaitSignalPolarity = FSMC_WaitSignalPolarity_Low;
FSMC_NORSRAMInitStructure.FSMC_AsynchronousWait=FSMC_AsynchronousWait_Disable;
FSMC_NORSRAMInitStructure.FSMC_WrapMode = FSMC_WrapMode_Disable;
FSMC_NORSRAMInitStructure.FSMC_WaitSignalActive = FSMC_WaitSignalActive_BeforeWaitState;
FSMC_NORSRAMInitStructure.FSMC_WriteOperation = FSMC_WriteOperation_Enable; //存儲器寫使能
FSMC_NORSRAMInitStructure.FSMC_WaitSignal = FSMC_WaitSignal_Disable;
FSMC_NORSRAMInitStructure.FSMC_ExtendedMode = FSMC_ExtendedMode_Disable; // 讀寫使用相同的時序
FSMC_NORSRAMInitStructure.FSMC_WriteBurst = FSMC_WriteBurst_Disable;
FSMC_NORSRAMInitStructure.FSMC_ReadWriteTimingStruct = &readWriteTiming;
FSMC_NORSRAMInitStructure.FSMC_WriteTimingStruct = &readWriteTiming; //讀寫同樣時序
FSMC_NORSRAMInit(&FSMC_NORSRAMInitStructure); //初始化FSMC配置
FSMC_NORSRAMCmd(FSMC_Bank1_NORSRAM4, ENABLE); // 使能BANK3
}
//在指定地址開始,連續寫入n個字節.
//pBuffer:字節指針
//WriteAddr:要寫入的地址
//n:要寫入的字節數
void FSMC_FPGA_WriteBuffer(u8* pBuffer,u32 WriteAddr,u32 n) ///void FSMC_SRAM_WriteBuffer(u16* pBuffer,u32 WriteAddr,u32 n)
{
for(;n!=0;n--)
{
*(vu8*)(Bank1_SRAM4_ADDR+WriteAddr)=*pBuffer; // *(vu16*)(Bank1_SRAM3_ADDR+WriteAddr)=*pBuffer;
WriteAddr+=1;//這里需要加2，是因為STM32的FSMC地址右移一位對其.加2相當于加1.
pBuffer++;
}
}
//在指定地址開始,連續讀出n個字節.
//pBuffer:字節指針
//ReadAddr:要讀出的起始地址
//n:要寫入的字節數
void FSMC_FPGA_ReadBuffer(u8* pBuffer,u32 ReadAddr,u32 n) ///void FSMC_SRAM_ReadBuffer(u16* pBuffer,u32 ReadAddr,u32 n)
{
for(;n!=0;n--)
{
*pBuffer++=*(vu8*)(Bank1_SRAM4_ADDR+ReadAddr); // *pBuffer++=*(vu16*)(Bank1_SRAM3_ADDR+ReadAddr);
ReadAddr+=1;//這里需要加2，是因為STM32的FSMC地址右移一位對其.加2相當于加1.
}
}
////////////////////////////////////////////////////////////////////////////////////////
//測試函數
//在指定地址寫入1個字節
//addr:地址
//data:要寫入的數據
void fsmc_fpga_test_write(u8 data,u32 addr)//void fsmc_sram_test_write(u16 data,u32 addr)
{
FSMC_FPGA_WriteBuffer(&data,addr,1);//寫入1個字節
}
//讀取1個字節
//addr:要讀取的地址
//返回值:讀取到的數據
u8 fsmc_fpga_test_read(u32 addr) //u16 fsmc_sram_test_read(u32 addr)
{
u8 data; //u16 data;
FSMC_FPGA_ReadBuffer(&data,addr,1);
return data;
}

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